Design, doping strategy and characterization of polymer-derived SiAlON
KUMARI M. 1
1 CNRS, Limoges, France
White light-emitting diodes (w-LEDs) are a key technology with outstanding photoluminescence efficiency, low power consumption, high safety, and non-toxicity. They can be used for a variety of uses, such as LCD backlights, automobile lighting, and display technology. Due to the demanding conditions associated with the widespread use of LEDs, the crystal structure, chemical composition, and shape/size of photoluminescent materials must be carefully controlled.
Recent research has showed that rare-earth-doped oxynitride possesses photoluminescence potential, and they could be employed as novel phosphors due to their outstanding thermal and chemical stabilities. Rare-earth doped β-SiAlON is well known in this field due to its superior mechanical capabilities, chemical stability, and radiant thermal stability. The chemical formula of this material is Si6-zAlzOzN8-z (0≤z≤4.2) where z is the number of Al-O pairs replaced by Si-N pairs and obtained by substituting Al-O for Si-N in the hexagonal crystal structure of β-SiAlON. A host material with high luminescence efficiency, β-SiAlON has longer emission and excitation wavelengths. To be acceptable for usage in LEDs, phosphor materials must have high phase purity and homogeneous crystal size distribution, as well as good optical efficiency, color stability, and low thermal quenching.
In this study, we investigate the polymer-derived ceramics (PDCs) method for the design of β-SiAlON. We anticipate that the envisioned materials will have excellent compositional and structural uniformity, as well as a relatively low temperature of preparation. At each stage of the synthesis of β-SiAlON, the evolving material is identified whereas the doping effect with rare-earth elements is investigated as proof of concept.