With the increasing energy demand and energy costs, the interest in materials with thermoelectric (TE) properties has increased. TE materials convert thermal energy into electrical energy using the Seebeck effect. The TE conversion efficiency of a material is measured by the dimensionless figure of merit, ZT, which is defined by: α²σT/κ where α is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. In order to provide maximum efficiency, it is desired that the material has a high Seebeck coefficient and electrical conductivity and low thermal conductivity. High-temperature TE materials (e.g. PbTe) consist of expensive and toxic components. On the other hand, ceramic materials have an important place in several applications due to their features such as high strength, chemical stability and high-temperature resistance. In this regard, with low production costs and no toxic components, Carbide ceramics might be promising candidates for high-temperature TE applications. In this study, the TE properties of spark plasma sintered SiC, TiC and B₄C carbide ceramics materials were investigated and compared with the results found in the literature with different production methods. B₄C, SiC and TiC were sintered with the spark plasma sintering (SPS) method under the same processing conditions. Phase analysis of the sintered samples was utilised with X-ray Diffractometer (XRD) analysis. Thermal diffusivity values were measured with a laser flash analyser (LFA), and heat capacities were measured with differential scanning calorimetry (DSC) analysis. Electrical conductivity and Seebeck coefficients were measured with the LSR-3 thermoelectric analyser. Density was measured by using Archimedes' principle. The densities found were used to calculate the thermal conductivity. Grain size, grain size distribution, grain shape and porosity affecting the TE properties of the materials were observed by Scanning Electron Microscopy (SEM). As a result, we showed by experimental studies that as a p-type semiconductor, SiC has a high Seebeck coefficient, high thermal conductivity, and low electrical conductivity. As a p-type semiconductor, B₄C has a high Seebeck coefficient, high electrical conductivity and low thermal conductivity. As an n-type conductor, TiC has a very low Seebeck coefficient, very high electrical conductivity and low thermal conductivity.  SiC ceramic material has the highest ZT value at room temperature. At high-temperature (923 K) where the analyses were performed, B₄C has the highest ZT value. This maximum ZT value of 3.7x10^-2. In the measurements, we saw that the Seebeck effect is significant for the ZT value. Increases in ZT values were observed at high temperatures for B₄C and SiC. In contrast, a slight decrease in the ZT value of TiC was observed at high temperatures.