Plasma etched surface morphology of quartz glass treated with ICP etching via fluorocarbon and argon
CHOI J. 1,2, BYUN Y. 1,2, IM W. 2, KIM H. 1
1 Korea Institute of Ceramic Engineering and Technology (KICET), Icheon-si, Korea (Republic of); 2 Hanyang University, Seoul, Korea (Republic of)
The relationship between the roughness and plasma resistance of quartz glasses for semiconductors and the causes of particle contamination were studied. The plasma etching rate of commercial quartz glasses was about 220-240 nm/min, and the p-value determined in the ANOVA (Analysis of Variance) test was 0.638, showing no statistically significant difference between the quartz glass types and manufacturing methods. In addition, the surface roughness after etching also increased from nm to several μm. On the other hand, the etching rate was affected by the initial roughness.