Freeze-granulated silicon carbide powder was densified to the full density without any sintering aids by rapid hot-pressing at 1850 °C. This densification temperature is at least 150-200 °C lower compared to the up to now known solid state sintered silicon carbide powders.
 
These additive-free silicon carbide ceramics was crept in vacuum at temperatures of 1500 °C to 1750 °C and compressive loads of 200 MPa to 400 MPa. The results showed that this way prepared ceramics had the lowest creep rate reported in the literature. The observed strain rates increased from 2.5×10-9 s-1 at 1500 °C and a load of 275 MPa to 1.05×10-7 s-1 at 1750 °C and a highest load of 400 MPa.
Static and dynamic oxidation resistance of this way prepared ceramics is excellent. The static oxidation at 1450 °C for 204 h is almost negligible in comparison to the LPS sintered SiC materials. In the dynamic regime the ceramics sustained 1900 °C for 60 s without any visible damage. It seems that this material is really suitable for ultra-high-temperature applications.